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v23990-p820-f-pm preliminary datasheet flowpack 1 3rd gen 1200v/75a compact flow1 housing trench fieldstop igbt4 technology compact and low inductance design aln substrate for improved performance built-in ntc motor drive power generation ups v23990-p820-f tj=25c, unless otherwise specified parameter symbol value unit inverter transistor t h =80c 75 t c =80c t h =80c 225 t c =80c t h =80c 212 t c =80c t sc t j 150c 10 s v cc v ge =15v 800 v inverter diode t h =80c 75 t c =80c t h =80c 150 t c =80c t h =80c 163 t c =80c w power dissipation per diode p tot dc forward current a t j =t j max t p limited by t j max a i f t j =t j max t j =25c t j =t j max t j =t j max t p limited by t j max v rrm maximum junction temperature power dissipation per igbt v ge t j max p tot short circuit ratings peak repetitive reverse voltage gate-emitter peak voltage a v c v types maximum ratings condition features flow1 housing target applications schematic i frm t j max repetitive peak forward current 175 v 1200 collector-emitter break down voltage repetitive peak collector current dc collector current v ce i cpulse i c 1200 20 w a 175 maximum junction temperature c copyright by vincotech 1 revision: 2
v23990-p820-f-pm preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition thermal properties insulation properties v is t=1min 4000 v dc min 12,7 mm min 12,7 mm clearance insulation voltage creepage distance t op operation temperature under switching condition -40?+150 c storage temperature t stg -40?+125 c copyright by vincotech 2 revision: 2
v23990-p820-f-pm preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 5 5,8 6,5 tj=150c tj=25c 1,6 1,92 2,4 tj=150c 2,39 tj=25c 0,025 tj=150c tj=25c 650 tj=150c tj=25c 165 tj=150c 183 tj=25c 27 tj=150c 35 tj=25c 271 tj=150c 351 tj=25c 83 tj=150c 115 tj=25c 6,16 tj=150c 9,44 tj=25c 4,02 tj=150c 6,48 thermal resistance chip to heatsink per chip r thjh thermal foil thickness=76um kunze foil ku-alf5 0,45 k/w tj=25c 1,4 1,75 2,5 tj=150c 1,71 tj=25c 69 tj=150c 76 tj=25c 316 tj=150c 499 tj=25c 7,26 tj=150c 14,26 di(rec)max tj=25c 2373 /dt tj=150c 371 tj=25c 2,61 tj=150c 5,34 thermal resistance chip to heatsink per chip r thjh thermal foil thickness=76um kunze foil ku-alf5 0,58 k/w v ns ma mws a v a/ s ns v na 4,46 tc=100c tj=25c 4,94 pf mws ? 290 375 4400 10 rgon=4 ? tol. 5% rated resistance r 25 power dissipation given epcos-typ p thermistor deviation of r100 d r/r r100=435 ? b-value b (25/100) tol. 3% tj=25c tj=25c 600 25 0 75 75 75 0,0024 rgoff=4 ? 15 75 rgon=4 ? integrated gate resistor inverter transistor gate emitter threshold voltage 1200 f=1mhz 15 0 235 c nc conditions characteristic values value output capacitance c oss r gint i ges t f e on c ies turn-off energy loss per pulse fall time turn-on energy loss per pulse collector-emitter cut-off current incl. diode v ge(th) turn-off delay time t d(off) t d(on) turn-on delay time rise time gate-emitter leakage current collector-emitter saturation voltage input capacitance v ce(sat) i ces e off q gate vcc=960v t rr reverse transfer capacitance diode forward voltage gate charge inverter diode peak reverse recovery current reverse recovery time reverse recovered energy peak rate of fall of recovery current reverse recovered charge erec q rr i rrm c rss v f t r tj=25c tj=25c 75 15 20 15 vce=vge 0 600 3530 2,6 210 k? 4,7 k mw %/k copyright by vincotech 3 revision: 2
v23990-p820-f-pm preliminary datasheet figure 1 output inverter igbt figure 2 output inverter igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 150 c vge from 7 v to 17 v in steps of 1 v vge from 7 v to 17 v in steps of 1 v figure 3 output inverter igbt figure 4 output inverter fred typical transfer characteristics typical diode forward current as ic = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v output inverter typical output characteristics 0 40 80 120 160 200 012345 v ce (v) ic (a) 0 7 14 21 28 35 0246810 v ge (v) i c (a) tj = 25c tj = tj max -25c 0 40 80 120 160 200 00,511,522,53 v f (v) i f (a) tj = 25c tj = tj ma x -25c 0 40 80 120 160 200 012345 v ce (v) ic (a) c opyright by vincotech 4 revision: 2
v23990-p820-f-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 75 a r goff = 4 ? figure 7 output inverter igbt figure 8 output inverter igbt typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c )e r e c = f ( r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 75 a output inverter e on e off e on: e off 0 4 8 12 16 20 24 0 30 60 90 120 150 i c (a) e (mws) e off e on e on e off 0 4 8 12 16 20 24 048121620 r g ( ) e (mws) e rec e rec 0 2 4 6 8 0 30 60 90 120 150 i c (a) e (mws) e rec e rec 0 1,5 3 4,5 6 048121620 r g ( ) e (mws) c opyright by vincotech 5 revision: 2
v23990-p820-f-pm preliminary datasheet figure 9 output inverter igbt figure 10 output inverter igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v r gon = 4 ? i c = 75 a r goff = 4 ? figure 11 output inverter fred figure 12 output inverter fred typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 75 a r gon = 4 ? v ge = 15 v output inverter t doff t f t don t r 0,001 0,01 0,1 1 0 30 60 90 120 150 ic (a) t ( s) t rr t rr 0 0,2 0,4 0,6 0,8 0481 21 62 0 r gon ( ) t rr ( s) t doff t f t don t r 0,001 0,01 0,1 1 0 4 8 12 16 20 r g ( ) t ( s) t rr t rr 0 0,2 0,4 0,6 0,8 0 30 60 90 120 150 i c (a) t rr ( s) c opyright by vincotech 6 revision: 2
v23990-p820-f-pm preliminary datasheet figure 13 output inverter fred figure 14 output inverter fred typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(ic) q rr = f(r gon ) at at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 75 a r gon = 4 ? v ge = 15 v figure 15 output inverter fred figure 16 output inverter fred typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(ic) i rrm = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 75 a r gon = 4 ? v ge = 15 v output inverter i rrm i rrm 0 20 40 60 80 100 0 4 8 12 16 20 r gon ( ) irr m (a) q rr q rr 0 4 8 12 16 048121620 r gon ( ) q rr ( c) i rrm i rrm 0 20 40 60 80 100 0 30 60 90 120 150 i c (a) irr m (a) q rr q rr 0 6 12 18 24 0 30 60 90 120 150 i c (a) q rr ( c) c opyright by vincotech 7 revision: 2
v23990-p820-f-pm preliminary datasheet figure 17 output inverter fred figure 18 output inverter fred typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di0/dt,direc/dt = f(ic) di0/dt,direc/dt = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 600 v v r = 600 v v ge = 15 v i f = 75 a r gon = 4 ? v ge = 15 v figure 19 output inverter igbt figure 20 output inverter fred igbt transient thermal impedance f red transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(tp) z thjh = f(tp) at at d = tp / t d = tp / t r thjh = 0,45 k/w r thjh = 0,58 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,05 2,4e+00 0,02 9,6e+00 0,10 3,9e-01 0,08 1,2e+00 0,24 8,4e-02 0,15 1,7e-01 0,03 7,0e-03 0,22 4,3e-02 0,03 8,5e-04 0,06 5,4e-03 0,05 6,7e-04 output inverter t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di0/dt direc/dt 0 1000 2000 3000 4000 5000 0 4 8 12 16 20 r gon ( ) di rec / dt (a/ s) di 0 /dt di rec /dt 0 800 1600 2400 3200 4000 0 30 60 90 120 150 i c (a) di rec / dt (a/ s) c opyright by vincotech 8 revision: 2
v23990-p820-f-pm preliminary datasheet figure 21 output inverter igbt figure 22 output inverter igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 c single heating t j = 175 c overall heating v ge =15 v figure 23 output inverter fred figure 24 output inverter fred power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 c single heating t j = 175 c overall heating output inverter 0 100 200 300 400 500 0 50 100 150 200 th ( o c) p tot (w) 0 25 50 75 100 125 0 50 100 150 200 th ( o c) i c (a) 0 80 160 240 320 400 0 50 100 150 200 th ( o c) p tot (w) 0 25 50 75 100 125 0 50 100 150 200 th ( o c) i f (a) c opyright by vincotech 9 revision: 2
v23990-p820-f-pm preliminary datasheet figure 25 output inverter igbt figure 26 output inverter igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce )v ge = f(qg) at at d = single pulse i c = 75 a th = 80 oc v ge = 15 v tj = t jmax oc output inverter v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 100 u 1m 10m 100m d c 10 0 10 3 10 u 0 5 10 15 20 0 100 200 300 400 qg (nc) v ge (v) 240v 960 v c opyright by vincotech 10 revision: 2
v23990-p820-f-pm preliminary datasheet figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 1000 2000 3000 4000 5000 25 50 75 100 125 t (c) r/ ? c opyright by vincotech 11 revision: 2
v23990-p820-f-pm preliminary datasheet t j 150 c r g on 4 ? r goff 4 ? figure 1 output inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of tdoff, teoff turn-on switching waveforms & definition of tdon, teon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 600 v v c (100%) = 600 v i c (100%) = 75 a i c (100%) = 75 a t doff = 0,35 s t don = 0,18 s t eoff = 0,75 s t eon = 0,53 s figure 3 output inverter igbt figure 4 output inverter igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 600 v v c (100%) = 600 v i c (100%) = 75 a i c (100%) = 75 a t f = 0,12 s t r = 0,04 s switching definitions output inverter general conditions = = = i c 1% u ce 90% u ge 90% -40 -20 0 20 40 60 80 100 120 140 -0,2 0 0,2 0,4 0,6 0,8 1 time (us) % t doff t eoff uce ic u ge ic 10% uge 10% t don u ce3% -40 0 40 80 120 160 200 240 2,8 2,95 3,1 3,25 3,4 3,55 3,7 time(us) % ic uce t eon uge fitted i c10% i c 90% i c 60% i c 40% -20 0 20 40 60 80 100 120 140 0,25 0,3 0,35 0,4 0,45 0,5 0,55 time (us) % uce ic t f i c10% ic90% -20 20 60 100 140 180 220 2,9 3 3,1 3,2 3,3 3,4 3,5 time(us) % tr uce ic c opyright by vincotech 12 revision: 2
v23990-p820-f-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 45,22 kw p on (100%) = 45,22 kw e off (100%) = 6,48 mj e on (100%) = 9,44 mj t eoff = 0,75 s t eon = 0,53 s figure 7 output inverter fred figure 8 output inverter igbt gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t r r v geoff = -15 v v d (100%) = 600 v v geon = 15 v i d (100%) = 75 a v c (100%) = 600 v i rrm (100%) = -76 a i c (100%) = 75 a t rr = 0,50 s q g = 435,75 nc switching definitions output inverter ic 1% uge90% -20 0 20 40 60 80 100 120 -0,2 0 0,2 0,4 0,6 0,8 1 time (us) % poff eoff teoff u ce3% u ge10% -20 20 60 100 140 180 220 2,9 3 3,1 3,2 3,3 3,4 3,5 3,6 3,7 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -250 -100 50 200 350 500 650 qg (nc) uge (v) i rrm 10% i rrm 90% i rrm 100% trr -120 -80 -40 0 40 80 120 3 3,2 3,4 3,6 3,8 4 time(us) % id ud fitted c opyright by vincotech 13 revision: 2
v23990-p820-f-pm preliminary datasheet figure 9 output inverter fred figure 10 output inverter fred turn-on switching waveforms & definition of t qr r turn-on switching waveforms & definition of t erec (t qrr = integrating time for q r r )( t erec = integrating time for e rec ) i d (100%) = 75 a p rec (100%) = 45,22 kw q rr (100%) = 14,26 c e rec (100%) = 5,34 mj t qint = 0,99 s t erec = 0,99 s switching definitions output inverter tqint -200 -150 -100 -50 0 50 100 150 2,9 3,15 3,4 3,65 3,9 4,15 4,4 time(us) % id q rr -20 0 20 40 60 80 100 120 2,9 3,15 3,4 3,65 3,9 4,15 4,4 time(us) % p rec erec te rec c opyright by vincotech 14 revision: 2
v23990-p820-f-pm preliminary datasheet package outline and pinout outline pinout c opyright by vincotech 15 revision: 2
v23990-p820-f-pm preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. c opyright by vincotech 16 revision: 2

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